Influence of sputtered AlN buffer on GaN epilayer grown by MOCVD

Abstract The ex situ sputtered AlN buffer and GaN epilayer grown on top of it by metalorganic chemical vapor deposition were studied comprehensively a variety techniques including atomic force microscope, high resolution x-ray diffraction, Raman photoelectron spectroscopy characterizations. It exhibited that the deposited using sputtering technique could be oxidized with exposure in atmosphere. Such oxidation phenomenon significantly influences characteristics epilayer, for example leading to poor surface morphology, dislocation density, large compressive stress. This study demonstrated effect oxygen impurities growth has an important guiding significance high-quality III-nitride related materials.